STORAGE DEVICE

WIPO Patent Application WO/2024/047486

A1

Provided is a storage device which allows for miniaturization and high integration. The present invention comprises: a first insulator on a substrate; an oxide semiconductor covering the first insulator; a first conductor and a second conductor on the oxide semiconductor; a second insulator on the first conductor; a third insulator on the second conductor; a third conductor on the second insulator; a fourth conductor on the third insulator; a fourth insulator which is disposed on the third conductor and the fourth conductor and which has a first opening overlapping the region between the first conductor, second insulator and third conductor and the second conductor, third insulator and fourth conductor; a fifth insulator disposed inside the first opening and disposed on the oxide semiconductor; a fifth conductor disposed on the fifth insulator inside the first opening; a sixth conductor which is disposed inside a second opening formed in the fourth insulator, and which is in contact with the top surface of the third conductor; and a seventh conductor which is disposed inside a third opening formed in the fourth insulator, the third insulator and the fourth conductor, and which is in contact with the top surface of the second conductor. The height of the first insulator is greater than the width of the first insulator.

YAMAZAKI SHUNPEI (JP)
KUNITAKE HITOSHI (JP)
MATSUZAKI TAKANORI (JP)

PCT/IB2023/058421

March 07, 2024

August 25, 2023

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SEMICONDUCTOR ENERGY LAB (JP)

H10B12/00; H01L21/336; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/786; H01L29/788; H01L29/792; H10B41/70

WO2020201865A1	2020-10-08
WO2020008304A1	2020-01-09

JP2018190976A

2018-11-29

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