Title:
SUBSTRATE HAVING THIN FILM LAYER FOR PATTERN-FORMATION MASK, AND METHOD FOR MANUFACTURING PATTERNED SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2016/129225
Kind Code:
A1
Abstract:
[Problem] To provide a substrate having a thin film layer for a pattern-formation mask, with which a relief pattern exhibiting excellent processing precision can be formed on the surface of a substrate by dry etching, and a method for manufacturing a patterned substrate by using the substrate having a thin film layer for a pattern-formation mask. [Solution] A substrate, which has a thin film layer for a pattern-formation mask, comprising a substrate formed from silicon or a silicon compound, and a thin film layer which is provided to the surface of the substrate, which is patterned by etching using plasma from a mixed gas of oxygen and chlorine, and which is to be used as a mask for pattern formation. If the value for the thickness of the thin film layer is plotted on a vertical axis, and the value for the chromium content ratio in the film thickness layer is plotted on a horizontal axis, and the values are varied, the use of a thin film having a thickness of at most 10nm and comprising chromium oxide having a chromium content ratio of 40-50 at% resulted in excellent sidewall angles in LER after quartz dry etching, and maintained resistance as an etching mask, and is therefore effective for the present invention.
Inventors:
OHTSU AKIHIKO (JP)
Application Number:
PCT/JP2016/000434
Publication Date:
August 18, 2016
Filing Date:
January 28, 2016
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/027; B29C59/02; B29L11/00
Domestic Patent References:
| WO2013047195A1 | 2013-04-04 |
Foreign References:
| JP2000221660A | 2000-08-11 | |||
| JP2009012319A | 2009-01-22 | |||
| JP2014195909A | 2014-10-16 | |||
| JP2013239632A | 2013-11-28 | |||
| JP2007033470A | 2007-02-08 |
Attorney, Agent or Firm:
YANAGIDA, Masashi et al. (JP)
Seiji Yanagida (JP)
Seiji Yanagida (JP)
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