SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS, AND PROGRAM

WIPO Patent Application WO/2023/181289

A1

This substrate processing apparatus comprises: a processing container that includes a first region for processing a substrate and a second region in which the substrate is not disposed; a first supply unit that supplies a processing gas to the first region; a second supply unit that supplies an adsorption-blocking gas to the second region in the processing container; a first supply system capable of supplying the processing gas to the first supply unit; a second supply system capable of supplying the adsorption-blocking gas to the second supply unit; and a control unit capable of controlling the first supply system and the second supply system so as to perform an adsorption-blocking gas supply step for supplying the adsorption-blocking gas to the second region and, after the adsorption-blocking gas supply process, a processing gas supply step for supplying the processing gas to the first region.

JPH08236526	METHOD OF MAKING ALL SURFACES OF WAFER FOR INTEGRATED CIRCUIT DEVICE GLOBAL PLANE OR FLATTENING IT
JP7468946	Substrate processing method
JPH09270496	MANUFACTURE OF SEMICONDUCTOR DEVICE

MATSUI SHUN (JP)
YOKOGAWA TAKASHI (JP)
OGAWA ARITO (JP)

PCT/JP2022/014081

September 28, 2023

March 24, 2022

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KOKUSAI ELECTRIC CORP (JP)

H01L21/318

WO2019188037A1	2019-10-03
WO2022054216A1	2022-03-17
WO2020188857A1	2020-09-24

JP2021052034A	2021-04-01
JP2017069407A	2017-04-06
JP2021108335A	2021-07-29
JP2018018882A	2018-02-01
JP2014093331A	2014-05-19

TAIYO, NAKAJIMA & KATO (JP)

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