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Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/181462
Kind Code:
A1
Abstract:
Provided are a substrate processing method and a substrate processing device capable of selectively forming a self‐assembled monolayer as a protective film while suppressing etching of a metal film on a substrate. A substrate processing method according to the present invention is for processing a substrate having, on a surface, a metal film formed region in which a metal film 1 is formed and a metal film non-formed region in which the metal film 1 is not formed, the method comprising: a dissolved oxygen concentration reduction step for reducing the dissolved oxygen concentration of a processing liquid containing a material for forming a self‐assembled monolayer 4; and a self‐assembled monolayer forming step for forming the self‐assembled monolayer 4 on the metal film 1 in the metal film formed region while suppressing oxidation of the metal film 1, by bringing the processing liquid into contact with at least the surface of the substrate after the dissolved oxygen concentration reduction step.

Inventors:
YOSHIDA YUKIFUMI (JP)
MIYAMOTO YASUHARU (JP)
Application Number:
PCT/JP2022/036192
Publication Date:
September 28, 2023
Filing Date:
September 28, 2022
Export Citation:
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Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/768; H01L23/532
Domestic Patent References:
WO2021015030A12021-01-28
Foreign References:
JP2021046587A2021-03-25
JP2020152976A2020-09-24
JP2005029810A2005-02-03
Attorney, Agent or Firm:
KOYAMA Yasushi (JP)
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