Title:
SUBSTRATE PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/153298
Kind Code:
A1
Abstract:
The present invention provides a substrate processing method in which an object film is formed of a first material layer of a substrate that comprises the first material layer and a second material layer. The present invention provides a substrate processing method which comprises: a step in which a first organic film is formed on a first material layer of a substrate that comprises the first material layer and a second material layer that is different form the first material layer; a step in which a first object film is formed on the second material layer by supplying a processing gas that contains the starting material of the object film, and the first object film is caused to react with the outermost surface of the first organic film, thereby forming an adsorption layer; a step in which a second organic film is formed on the adsorption layer; and a step in which a second object film is formed on the first object film.
Inventors:
FUSE TAKASHI (JP)
TODA KAZUYA (JP)
AZUMO SHUJI (JP)
TODA KAZUYA (JP)
AZUMO SHUJI (JP)
Application Number:
PCT/JP2023/003339
Publication Date:
August 17, 2023
Filing Date:
February 02, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
C23C16/04; C23C16/40; H01L21/31; H01L21/318; H01L21/768; H01L23/522
Foreign References:
| JP2020533808A | 2020-11-19 | |||
| US20210020444A1 | 2021-01-21 | |||
| JP2021127508A | 2021-09-02 | |||
| JP2021536682A | 2021-12-27 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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