SUBSTRATE TREATMENT DEVICE, FLUID ACTIVATION DEVICE, SUBSTRATE TREATMENT METHOD, AND FLUID ACTIVATION METHOD

WIPO Patent Application WO/2024/029388

A1

A device according to the present disclosure comprises: a stage which is disposed in a treatment vessel and upon which a substrate for semiconductor production or a substrate for FPD production is placed; a fluid supply source which supplies a treatment fluid to the treatment vessel; a metallic resonator in the shape of a lidded and bottomed cylinder, a plurality of which are disposed in the treatment vessel; pipes which are each configured from a dielectric so as to extend along the central axis of a respective resonator and traverse said resonator and to form a fluid passage to which the treatment fluid is supplied; a plurality of ejection holes which are provided in the treatment vessel so as to open toward different positions on the substrate and which are connected to different fluid passages; and a microwave supply source, a plurality of which are provided in order to supply microwaves to different resonators and activate the treatment fluid in an activation region surrounded by the resonator in each fluid passage.

KUBOTA YUSUKE (JP)
IIZUKA HACHISHIRO (JP)
OZAKI SHIGENORI (JP)
YAMAWAKU JUN (JP)
SHINDO TAKAHIRO (JP)
YAMANISHI YOSHIKI (JP)
NARUSHIMA MASAKI (JP)
NISHIOKA MASATERU (JP)

PCT/JP2023/027038

February 08, 2024

July 24, 2023

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TOKYO ELECTRON LTD (JP)
AIST (JP)

H05H1/46; C23C16/452; C23C16/511; H01L21/205

JP2020009745A	2020-01-16
US20090295509A1	2009-12-03
JP2003142460A	2003-05-16
US20100051612A1	2010-03-04
JP2010207735A	2010-09-24
JP2005322582A	2005-11-17

YAYOY PATENT OFFICE (JP)

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