Title:
SUBSTRATE TREATMENT DEVICE, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, PROGRAM, AND GAS SUPPLY SYSTEM
Document Type and Number:
WIPO Patent Application WO/2021/020008
Kind Code:
A1
Abstract:
The present invention controls the film thickness distribution of a film that is formed on a substrate. This substrate treatment device comprises: a treatment gas nozzle for supplying a treatment gas to inside a treatment chamber; two or more inert gas nozzles which are provided so that the treatment gas nozzle is in the center therebetween in the circumferential direction, and which supply an inert gas to inside the treatment chamber; a treatment gas supply unit for supplying the treatment gas to the treatment gas nozzle; an inert gas supply unit for supplying the inert gas to each of the inert gas nozzles; and a control unit that is configured so as to enable control of the flow rate of treatment gas that is supplied from the treatment gas supply unit to the treatment gas nozzle and control of each of the flow rates of inert gas that is supplied from the inert gas supply unit to the respective inert gas nozzles.
Inventors:
NAGATOMI YOSHIMASA (JP)
URUSHIHARA MIKA (JP)
SASAKI TAKAFUMI (JP)
URUSHIHARA MIKA (JP)
SASAKI TAKAFUMI (JP)
Application Number:
PCT/JP2020/025776
Publication Date:
February 04, 2021
Filing Date:
July 01, 2020
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; C23C16/455; C23C16/52; H01L21/316
Foreign References:
| JP2019062053A | 2019-04-18 | |||
| JP2018195727A | 2018-12-06 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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