SUBSTRATE TREATMENT DEVICE, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, AND HEATER UNIT

WIPO Patent Application WO/2020/145183

A1

The present invention provides a configuration comprising a reaction chamber that accommodates a substrate therein, a furnace body provided so as to cover the periphery of the reaction chamber, a heating element provided in the interior or on the inner side of the furnace body, a first temperature sensor provided so that a temperature measuring point is positioned near the heating element, a second temperature sensor placed so that the temperature measuring point is close to the temperature measuring point of the first temperature sensor, a third temperature sensor provided in the interior or on the outer side of the reaction chamber at a position close to the substrate than the temperature measuring point of the first temperature sensor and far from the heating element, and a temperature regulator that controls the amount of heat emitted by the heating element while referencing the temperature of the first temperature sensor so that the temperature detected by the third temperature sensor matches a prescribed target. When an abnormality in the first temperature sensor is detected, the temperature regulator is capable of continuing to control the amount of heat emitted by referencing the temperature of the second temperature sensor instead of the temperature of the first temperature sensor.

SUGIURA SHINOBU (JP)
UENO MASAAKI (JP)
KOSUGI TETSUYA (JP)
MURATA HITOSHI (JP)
SUGISHITA MASASHI (JP)
YAMADA TOMOYUKI (JP)

PCT/JP2019/051203

July 16, 2020

December 26, 2019

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KOKUSAI ELECTRIC CORP (JP)

H01L21/31; C23C16/46

WO2018100850A1

2018-06-07

JPH04165290A	1992-06-11
JPH10270454A	1998-10-09
JPS52127477U	1977-09-28
JPH01210831A	1989-08-24
JP2016057142A	2016-04-21

POLAIRE I.P.C. (JP)

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