Title:
SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/187104
Kind Code:
A1
Abstract:
Provided are a substrate treatment method and a substrate treatment device for forming a silicon nitride film . This substrate treatment method forms a silicon nitride film by repeating a step for feeding a silicon-containing gas to a temperature-regulated substrate and a step for feeding a nitrogen-containing gas to the substrate, wherein the substrate temperature is regulated to 600℃ or lower, the silicon-containing gas contains a halogen, and the nitrogen-containing gas is a mixed gas containing at least a first gas and a second gas that is different from the first gas.
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Inventors:
MURAKAMI HIROKI (JP)
Application Number:
PCT/JP2021/008152
Publication Date:
September 23, 2021
Filing Date:
March 03, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/31; C23C16/42; C23C16/455; H01L21/318
Foreign References:
| JP2019204942A | 2019-11-28 | |||
| JP2018198288A | 2018-12-13 | |||
| JP2018525841A | 2018-09-06 | |||
| JP2017174919A | 2017-09-28 | |||
| JP2007281082A | 2007-10-25 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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