Title:
SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT SYSTEM
Document Type and Number:
WIPO Patent Application WO/2024/070801
Kind Code:
A1
Abstract:
This substrate treatment method includes: forming an Ru film on a substrate through electroless plating; carrying out a treatment using an inert-gas plasma on the substrate on which the Ru film is formed; and carrying out a reduction treatment on the substrate after the treatment using the inert-gas plasma.
Inventors:
IWASHITA MITSUAKI (JP)
KIKUCHI YUKI (JP)
NAKAMURA GENJI (JP)
NAGAI HIROYUKI (JP)
KAWANO YUMIKO (JP)
AZUMO SHUJI (JP)
FUJITA KEIICHI (JP)
KIKUCHI YUKI (JP)
NAKAMURA GENJI (JP)
NAGAI HIROYUKI (JP)
KAWANO YUMIKO (JP)
AZUMO SHUJI (JP)
FUJITA KEIICHI (JP)
Application Number:
PCT/JP2023/033864
Publication Date:
April 04, 2024
Filing Date:
September 19, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/288; C23C18/42; H01L21/28; H01L21/3205; H01L21/768; H01L23/532
Domestic Patent References:
| WO2019151078A1 | 2019-08-08 |
Foreign References:
| US20160126134A1 | 2016-05-05 |
Attorney, Agent or Firm:
TAKAYAMA Hiroshi (JP)
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