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Title:
SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/005038
Kind Code:
A1
Abstract:
[Problem] The present invention addresses the problem of improving the adhesion between a first layer and a second layer in a substrate with a multilayer reflective film, the substrate having a protective film that comprises the first layer and the second layer. [Solution] The present invention provides a substrate with a multilayer reflective film, which comprises the substrate, the multilayer reflective film and a protective film that comprises a first layer and a second layer. This substrate with a multilayer reflective film is characterized in that: the protective film contains at least one metal element Em which has a Fermi level of -4.7 eV or less and at least one additive element Ea which has a Fermi level of more than -4.7 eV; and with respect to the distribution of the contents of components contained in the protective film with respect to the position x in the film thickness direction of the protective film, if an inflection point x1 is the position x at which a switch is made between the second layer component dominant state to the first layer component dominant state, M is the content of the metal element Em, and A is the content of the additive element Ea, the ratio A/M at the inflection point x1 is 0.020 or more.

Inventors:
NAKAGAWA MASANORI (JP)
Application Number:
PCT/JP2023/023882
Publication Date:
January 04, 2024
Filing Date:
June 27, 2023
Export Citation:
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Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24; C23C14/06; G03F1/48
Domestic Patent References:
WO2021200325A12021-10-07
WO2021132111A12021-07-01
Foreign References:
JP2021128247A2021-09-02
JP2021157097A2021-10-07
Attorney, Agent or Firm:
OKABE Noriaki et al. (JP)
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