Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
THIN FILM BULK ACOUSTIC RESONATOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/189964
Kind Code:
A1
Abstract:
Disclosed in the present invention is a thin film bulk acoustic resonator and a manufacturing method therefor, the thin film bulk acoustic resonator comprising: a first substrate; a support layer bonded on the first substrate, a first empty cavity that runs through the support layer being formed within the support layer; a piezoelectric overlapping layer structure which covers the first empty cavity, the piezoelectric overlapping layer structure, from top to bottom in a sequentially overlapping fashion, comprising a first electrode, a piezoelectric layer, and a second electrode, where in an active resonance area, the first electrode, the piezoelectric layer, and the second electrode overlap in the direction orthogonal to the piezoelectric layer; the first electrode comprises a first lateral face and/or the second electrode comprises a second lateral face, at least a portion of the borders of the active resonance area comprise the first lateral face and/or the second lateral face, and the included angle of the first lateral face and/or second lateral face with a surface of the piezoelectric layer is 85-95 degrees. The present invention is able to improve piezoelectric layer crystal orientation, reduce transverse wave loss, and allow for the improvement of the Q factor of thin film bulk acoustic resonators.

More Like This:
JP2018129606CRYSTAL RESONATOR AND CRYSTAL OSCILLATOR
JPS57106211QUARTZ OSCILLATOR
Inventors:
HUANG HERB HE (CN)
LUO HAILONG (CN)
LI WEI (CN)
Application Number:
PCT/CN2020/135656
Publication Date:
September 30, 2021
Filing Date:
December 11, 2020
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NINGBO SEMICONDUCTOR INT CORP (CN)
International Classes:
H03H9/02; H03H9/17
Foreign References:
CN112039477A2020-12-04
CN107809221A2018-03-16
CN110581695A2019-12-17
CN110401428A2019-11-01
CN110611493A2019-12-24
CN108336982A2018-07-27
US20190341906A12019-11-07
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: COMBINED SENSOR AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE

Next Patent: FILM BULK ACOUSTIC RESONATOR AND MANUFACTURING METHOD THEREFOR