Title:
THIN FILM PROCESSING METHOD, LIGHT-EMITTING DIODE PREPARATION METHOD, AND LIGHT-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2023/093791
Kind Code:
A1
Abstract:
The present application discloses a thin film processing method, a light-emitting diode preparation method, and a light-emitting diode. The thin film processing method comprises: providing an electron transport film layer using a metal oxide as an electron transport material; and annealing the electron transport film layer by means of pulsed light in a first inert gas environment having an oxygen content of 25-40 ppm.
Inventors:
MO XINDI (CN)
ZHANG JIANXIN (CN)
YAN YIRAN (CN)
AO ZITONG (CN)
YANG FAN (CN)
MA SONG (CN)
ZHANG JIANXIN (CN)
YAN YIRAN (CN)
AO ZITONG (CN)
YANG FAN (CN)
MA SONG (CN)
Application Number:
PCT/CN2022/133958
Publication Date:
June 01, 2023
Filing Date:
November 24, 2022
Export Citation:
Assignee:
TCL TECH GROUP CORP (CN)
International Classes:
H01L51/56; H01L51/50
Foreign References:
| CN112331785A | 2021-02-05 | |||
| CN106409995A | 2017-02-15 |
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD. (CN)
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