Title:
THIN FILM TRANSISTOR ARRAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2021/022681
Kind Code:
A1
Abstract:
A thin film transistor array substrate, comprising: a substrate, a gate, a gate insulating layer, an active layer, an ohmic contact layer, a source/drain, a pixel electrode, and a passivation layer arranged in sequence. The gate and the source/drain are of a double-layer structure, and the double-layer structure comprises a molybdenum ternary alloy barrier layer containing molybdenum and a copper electrode layer. The double-layer structure solves the undercut and hollow-out problems of a metal layer in the thin film transistor array substrate, thereby improving the yield of products.
Inventors:
LIU JING (CN)
Application Number:
PCT/CN2019/112990
Publication Date:
February 11, 2021
Filing Date:
October 24, 2019
Export Citation:
Assignee:
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD (CN)
International Classes:
H01L29/49; H01L27/12; H01L29/45; H01L29/786
Foreign References:
| US20080129943A1 | 2008-06-05 | |||
| CN103456738A | 2013-12-18 | |||
| CN207925481U | 2018-09-28 | |||
| CN104600123A | 2015-05-06 | |||
| CN101132011A | 2008-02-27 | |||
| US20130277660A1 | 2013-10-24 | |||
| KR20180033060A | 2018-04-02 |
Attorney, Agent or Firm:
ESSEN PATENT & TRADEMARK AGENCY (CN)
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