Title:
THIN FILM TRANSISTOR AND ELECTRONIC DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2024/045860
Kind Code:
A1
Abstract:
The present application provides a thin film transistor and an electronic device using same. An active layer in the thin film transistor comprises a first active layer, a channel layer and a second active layer which are stacked; the first active layer comprises a first doped part and a second doped part, the first doped part being connected to the channel layer and the second doped part, and the concentration of doped ions in the first doped part being smaller than that of doped ions in the second doped part. The present application reduces leakage currents, and improves the mobility in 'channel regions' of thin film transistors.
More Like This:
| JP5697396 | Semiconductor device |
| JP3961310 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| JP2018005239 | DISPLAY DEVICE |
Inventors:
LI ZHIFU (CN)
LIU GUANGHUI (CN)
AI FEI (CN)
SONG DEWEI (CN)
LUO CHENGZHI (CN)
LIU GUANGHUI (CN)
AI FEI (CN)
SONG DEWEI (CN)
LUO CHENGZHI (CN)
Application Number:
PCT/CN2023/104225
Publication Date:
March 07, 2024
Filing Date:
June 29, 2023
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/786; H01L21/336; H01L29/10; H01L29/167
Foreign References:
| CN115425090A | 2022-12-02 | |||
| US6747313B1 | 2004-06-08 | |||
| CN110137356A | 2019-08-16 | |||
| CN110024133A | 2019-07-16 |
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD. (CN)
Download PDF: