Title:
THIN FILM TRANSISTOR HAVING METAL OXIDE CHANNEL LAYER CONTAINING BIXBYITE CRYSTAL, AND VERTICAL NON-VOLATILE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/040183
Kind Code:
A1
Abstract:
Provided are a thin film transistor and a vertical non-volatile memory device. The thin film transistor comprises: a gate electrode; and a metal oxide channel layer extending across the top or bottom of the gate electrode, comprising a bixbyite crystal, and having semiconducting properties. An insulating layer is disposed between the gate electrode and the metal oxide channel layer. Source and drain electrodes are electrically connected to end portions at both sides, respectively, of the metal oxide channel layer.
Inventors:
JEONG JAE KYEONG (KR)
YANG HYUN JI (KR)
SEUL HEYON JOO (KR)
YANG HYUN JI (KR)
SEUL HEYON JOO (KR)
Application Number:
PCT/KR2020/005335
Publication Date:
March 04, 2021
Filing Date:
April 22, 2020
Export Citation:
Assignee:
UNIV HANYANG IND UNIV COOP FOUND (KR)
International Classes:
H01L29/786; H01L21/324; H01L27/1157; H01L27/11582; H01L29/66; H01L29/792
Foreign References:
| KR20180071017A | 2018-06-27 | |||
| KR20190088492A | 2019-07-26 | |||
| US20140239291A1 | 2014-08-28 |
Other References:
EBATA, KAZUAKI ET AL.: "Poly crystalline In-Ga-O Semiconductor for High-Performance Thin-Film Transistor", 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES ( AM -FPD), 2012, 4 July 2012 (2012-07-04), pages 9 - 12, XP032233225
BAE, EUNJIN ET AL.: "A Study on Indium Gallium Oxide Thin Film Transistors prepared by a Solution-based Deposition Method", KOREAN CHEMICAL ENGINEERING RESEARCH, vol. 49, no. 5, October 2011 (2011-10-01), pages 600 - 604, XP055796515
YANG, HYEONJI ET AL.: "Improved performance of Indium-Gallium-Oxide thin film transistors fabricated by atomic layer deposition", 2019 MRS(MATERIALS RESEARCH SOCIETY OF KOREA, vol. 9, no. 28, 5 July 2019 (2019-07-05), pages 1 - 247, XP055796517
BAE, EUNJIN ET AL.: "A Study on Indium Gallium Oxide Thin Film Transistors prepared by a Solution-based Deposition Method", KOREAN CHEMICAL ENGINEERING RESEARCH, vol. 49, no. 5, October 2011 (2011-10-01), pages 600 - 604, XP055796515
YANG, HYEONJI ET AL.: "Improved performance of Indium-Gallium-Oxide thin film transistors fabricated by atomic layer deposition", 2019 MRS(MATERIALS RESEARCH SOCIETY OF KOREA, vol. 9, no. 28, 5 July 2019 (2019-07-05), pages 1 - 247, XP055796517
Attorney, Agent or Firm:
E-SANG PATENT & TRADEMARK LAW FIRM (KR)
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