THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE

Title:

THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE

Document Type and Number:

WIPO Patent Application WO/2017/020542

Kind Code:

A1

Abstract:

Provided are a thin film transistor and manufacturing method thereof, array substrate and display device. The manufacturing method of a thin film transistor comprises: providing a substrate (301); sequentially forming a gate (302), a gate insulation layer (303), an active layer of an amorphous silicon material (3042) and a capping layer (305) on the substrate (301), wherein a surface of the capping layer (305) away from the active layer of the amorphous silicon material (3042) is formed with a pattern, and the pattern is composed of at least one groove (a) along a length direction of the active layer and at least one groove (b) along a width direction of the active layer; performing a laser annealing treatment on the active layer of the amorphous silicon material (3042) to convert the same to an active layer of a low temperature polysilicon material; and removing the capping layer (305).

Inventors:

WANG ZUQIANG (CN)
YANG YUQING (CN)

Application Number:

PCT/CN2016/070007

Publication Date:

February 09, 2017

Filing Date:

January 04, 2016

Export Citation:

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Assignee:

BOE TECHNOLOGY GROUP CO LTD (CN)

International Classes:

H01L21/336; H01L27/12; H01L29/786

Foreign References:

CN105161498A	2015-12-16
CN102610520A	2012-07-25
JP2001060551A	2001-03-06
CN101834138A	2010-09-15

Other References: