Title:
THIN FILM TRANSISTOR, OXIDE SEMICONDUCTOR FILM AND SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2017/090584
Kind Code:
A1
Abstract:
A thin film transistor according to one mode of the present invention is provided with the following: a gate electrode; an active layer constituted from an oxide containing indium, zinc and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and drain electrode that are electrically connected to the active layer. The atomic proportions of each element relative to the total quantity of indium, zinc and titanium that constitute the oxide are 24-80 at.% of indium, 16-70 at.% of zinc and 0.1-20 at.% of titanium.
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Inventors:
UENO MITSURU (JP)
KIYOTA JUNYA (JP)
KOBAYASHI MOTOSHI (JP)
TAKEI MASAKI (JP)
TAKAHASHI KAZUTOSHI (JP)
HIDAKA KOJI (JP)
KAWAGOE YUU (JP)
TAKESUE KENTAROU (JP)
WADA MASARU (JP)
KIYOTA JUNYA (JP)
KOBAYASHI MOTOSHI (JP)
TAKEI MASAKI (JP)
TAKAHASHI KAZUTOSHI (JP)
HIDAKA KOJI (JP)
KAWAGOE YUU (JP)
TAKESUE KENTAROU (JP)
WADA MASARU (JP)
Application Number:
PCT/JP2016/084539
Publication Date:
June 01, 2017
Filing Date:
November 22, 2016
Export Citation:
Assignee:
ULVAC INC (JP)
International Classes:
H01L29/786; C23C14/08; C23C14/34; H01L21/203; H01L21/336
Foreign References:
| JP2012054335A | 2012-03-15 | |||
| JP2012151469A | 2012-08-09 |
Attorney, Agent or Firm:
OMORI, Junichi (JP)
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