THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, AND ARRAY SUBSTRATE

WIPO Patent Application WO/2022/247148

A1

A thin film transistor, an array substrate, and a preparation method for the thin film transistor. The thin film transistor comprises: a base substrate (101); and a first active layer (104), a first insulating layer (105) and a second active layer (106) which are sequentially stacked on the base substrate (101), wherein the first active layer (104) comes into contact with the second active layer (106) by means of a first via hole structure (116) located in the first insulating layer (105); and the parts, which are not in contact with each other, of the first active layer (104) and the second active layer (106) are spaced apart by the first insulating layer (105). The thin film transistor has a structure with a plurality of active layers, such that charges are respectively gathered on two surfaces of each active layer, thereby exponentially increasing the number of charges gathered on the surfaces of the active layers, and thus exponentially increasing an on-state current of the thin film transistor.

HUANG JIE (CN)
NING CE (CN)
LI ZHENGLIANG (CN)
HU HEHE (CN)
YAO NIANQI (CN)
ZHAO KUN (CN)
ZHOU TIANMIN (CN)
LEI LIPING (CN)

PCT/CN2021/128401

December 01, 2022

November 03, 2021

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BOE TECHNOLOGY GROUP CO LTD (CN)

H01L29/786; H01L21/336; H01L21/34; H01L27/12; H01L27/28; H01L29/06; H01L29/10; H01L51/05; H01L51/40

CN109686794A	2019-04-26
CN110797356A	2020-02-14
CN108400139A	2018-08-14
CN102184968A	2011-09-14
CN106935657A	2017-07-07
CN103500764A	2014-01-08
US10008614B1	2018-06-26

LIU, SHEN & ASSOCIATES (CN)

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