THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND METHODS FOR FORMING THE SAME

WIPO Patent Application WO/2020/037489

A1

Three-dimensional (3D) memory devices having through array contacts (TACs) and methods for forming the same are described herein. A method for forming a 3D memory device (100) is provided. A dielectric stack including a plurality of dielectric/sacrificial layer pairs is formed on a substrate (102). A channel structure (108) extending vertically through the dielectric stack is formed. A first opening extending vertically through the dielectric stack is formed. A spacer (138) is formed on a sidewall of the first opening. A TAC (136) extending vertically through the dielectric stack is formed by depositing a conductor layer (140) in contact with the spacer (138) in the first opening. A slit (132) extending vertically through the dielectric stack is formed after forming the TAC (136). A memory stack (104) including a plurality of conductor/dielectric layer pairs is formed on the substrate (102) by replacing, through the slit (132), the sacrificial layers in the dielectric/sacrificial layer pairs with a plurality of conductor layers (110).

WO/1997/003469	ELECTRICALLY ERASABLE PROGRAMMABLE ROM MEMORY CELL ARRAY AND A METHOD OF PRODUCING THE SAME
WO/2022/046239	THREE-DIMENSIONAL MEMORY DEVICE WITH VERTICAL FIELD EFFECT TRANSISTORS AND METHOD OF MAKING THEREOF
WO/2021/056325	THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

GUO MEI LAN (CN)
HU YUSHI (CN)
XIA JI (CN)
ZHU HONGBIN (CN)

PCT/CN2018/101482

February 27, 2020

August 21, 2018

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YANGTZE MEMORY TECH CO LTD (CN)

H01L27/11551

CN106920794A	2017-07-04
CN106910746A	2017-06-30
US20140175532A1	2014-06-26
US20160099255A1	2016-04-07

NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)

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