Title:
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/060218
Kind Code:
A1
Abstract:
In certain aspects, a three-dimensional (3D) memory device includes channel structures in a first region, word line pick-up structures in a dielectric portion of a second region, and word lines each extending in the first region and a conductive portion of the second region. The first region and the second region are arranged in a first direction. The dielectric portion and the conductive portion of the second region are arranged in a second direction perpendicular to the first direction. The word lines are discontinuous in the dielectric portion of the second region and are electrically connected to the word line pick-up structures, respectively.
Inventors:
WANG DI (CN)
ZHANG ZHONG (CN)
ZHOU WENXI (CN)
XIA ZHILIANG (CN)
HUO ZONGLIANG (CN)
XIE WEI (CN)
ZHANG ZHONG (CN)
ZHOU WENXI (CN)
XIA ZHILIANG (CN)
HUO ZONGLIANG (CN)
XIE WEI (CN)
Application Number:
PCT/CN2022/120955
Publication Date:
March 28, 2024
Filing Date:
September 23, 2022
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/11556
Foreign References:
| CN113519056A | 2021-10-19 | |||
| CN114730770A | 2022-07-08 | |||
| US20210225872A1 | 2021-07-22 | |||
| US202216881168A | ||||
| US202216881339A |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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