Title:
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/060219
Kind Code:
A1
Abstract:
In certain aspects, a method for forming a three-dimensional (3D) memory device is disclosed. A stack structure including interleaved first dielectric layers and second dielectric layers is formed. Channel structures extending through the first dielectric layers and the second dielectric layers in a first region of the stack structure are formed. All the second dielectric layers in the first region and parts of the second dielectric layers in a second region of the stack structure are replaced with conductive layers. Word line pick-up structures extending through the first dielectric layers and remainders of the second dielectric layers in the second region of the stack structure are formed at different depths, such that the word line pick-up structures are electrically connected to the conductive layers, respectively, in the second region of the stack structure.
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Inventors:
WANG DI (CN)
ZHANG ZHONG (CN)
ZHOU WENXI (CN)
XIA ZHILIANG (CN)
HUO ZONGLIANG (CN)
XIE WEI (CN)
ZHANG ZHONG (CN)
ZHOU WENXI (CN)
XIA ZHILIANG (CN)
HUO ZONGLIANG (CN)
XIE WEI (CN)
Application Number:
PCT/CN2022/120958
Publication Date:
March 28, 2024
Filing Date:
September 23, 2022
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/26
Domestic Patent References:
| WO2020177049A1 | 2020-09-10 |
Foreign References:
| CN114420185A | 2022-04-29 | |||
| US20200119042A1 | 2020-04-16 | |||
| US20140175365A1 | 2014-06-26 | |||
| US9425391B1 | 2016-08-23 | |||
| CN102956641A | 2013-03-06 | |||
| US202216881168A | ||||
| US202216881339A |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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