Title:
TRANSISTOR SEMICONDUCTOR SUBSTRATE, TRANSISTOR, AND METHOD OF MANUFACTURING TRANSISTOR SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2012/176411
Kind Code:
A1
Abstract:
Provided is a semiconductor substrate, comprising: a base substrate; a first epitaxial crystal layer disposed upon the base substrate and formed from a nitride first crystal including a group-IIIa element; and a second epitaxial crystal layer disposed upon the first epitaxial crystal layer, having a larger band gap than the first crystal, and formed from a nitride second crystal including a group-IIIa element and a group-IIIb element which has replaced a portion of the group-IIIa element. In the semiconductor substrate, it is permissible for the second epitaxial crystal layer to conform with the first epitaxial crystal layer in either a lattice or a pseudo-lattice.
Inventors:
HATA MASAHIKO (JP)
SAZAWA HIROYUKI (JP)
CHICHIBU SHIGEFUSA (JP)
SHIMADA KAZUHIRO (JP)
SAZAWA HIROYUKI (JP)
CHICHIBU SHIGEFUSA (JP)
SHIMADA KAZUHIRO (JP)
Application Number:
PCT/JP2012/003908
Publication Date:
December 27, 2012
Filing Date:
June 14, 2012
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO (JP)
HATA MASAHIKO (JP)
SAZAWA HIROYUKI (JP)
CHICHIBU SHIGEFUSA (JP)
SHIMADA KAZUHIRO (JP)
HATA MASAHIKO (JP)
SAZAWA HIROYUKI (JP)
CHICHIBU SHIGEFUSA (JP)
SHIMADA KAZUHIRO (JP)
International Classes:
H01L21/338; H01L21/20; H01L21/205; H01L29/778; H01L29/812
Foreign References:
| JP2007305954A | 2007-11-22 | |||
| JP2008047859A | 2008-02-28 | |||
| JP2000243947A | 2000-09-08 | |||
| JP2011515861A | 2011-05-19 | |||
| JP2001060682A | 2001-03-06 | |||
| JPH1154840A | 1999-02-26 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Ryuka international patent business corporation (JP)
Ryuka international patent business corporation (JP)
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Claims: