Title:
TUNGSTEN SILICIDE TARGET MEMBER AND METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING TUNGSTEN SILICIDE FILM
Document Type and Number:
WIPO Patent Application WO/2019/187329
Kind Code:
A1
Abstract:
Provided is a tungsten silicide target member for efficiently suppressing generation of particles during sputtering film formation. A tungsten silicide target member having a two-phase structure of a WSi2 phase and a Si phase, wherein the compositional formula thereof in terms of atomic ratio is WSix (where X > 2.0), the ratio (I1/S1) of the total area I1 of Si grains in which the area per Si particle is 63.6 µm2 or greater with respect to the total area S1 of Si grains constituting the Si phase when a sputtering surface is observed is 5% or less, and the Weibull modulus of the flexural strength is 2.1 or greater.
More Like This:
Inventors:
DASAI TAKAFUMI (JP)
ASANO TAKAYUKI (JP)
OKABE TAKEO (JP)
ASANO TAKAYUKI (JP)
OKABE TAKEO (JP)
Application Number:
PCT/JP2018/043048
Publication Date:
October 03, 2019
Filing Date:
November 21, 2018
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; B22F1/05
Domestic Patent References:
WO2017158928A1 | 2017-09-21 | |||
WO2018173450A1 | 2018-09-27 |
Foreign References:
JPH0616412A | 1994-01-25 | |||
JPH0820863A | 1996-01-23 | |||
JPH06322529A | 1994-11-22 | |||
JPH0849068A | 1996-02-20 | |||
JP2005239532A | 2005-09-08 | |||
JPH11200024A | 1999-07-27 |
Other References:
See also references of EP 3778985A4
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
Download PDF:
Previous Patent: MILLIWAVE-TRANSMITTING DECORATIVE ARTICLE, SILVER MIRROR FILM AND METHOD FOR FORMING SAME
Next Patent: ROTARY MACHINE
Next Patent: ROTARY MACHINE