VERTICAL CAVITY SURFACE EMITTING LASER

WIPO Patent Application WO/2023/238429

A1

In the present invention, a lower distributed Bragg reflection layer is disposed on a first surface of a semiconductor layer. An active layer is disposed on the lower distributed Bragg reflection layer. An upper distributed Bragg reflection layer is disposed on the active layer. A heat-transfer member, which includes a material with thermal conductivity higher than the thermal conductivity of the semiconductor layer, is disposed on a second surface of the semiconductor which is on the side opposite the first surface. A mesa structure is formed from the upper distributed Bragg reflection layer to at least an upper surface of the lower distributed Bragg reflection. Furthermore, the mesa structure includes a current-confining layer that concentrates current in a partial region in a planar view. A dimension in a height direction from the second surface of the semiconductor layer to the current-confining layer is one-half or less of the diameter of a minimum bounding circle that encompasses the mesa structure in a planar view.

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USHIMI YOSHIMITSU (JP)
HIMEDA KOSHI (JP)
KABURAKI SHINJI (JP)
YAMADA SHUHEI (JP)

PCT/JP2023/000315

December 14, 2023

January 10, 2023

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MURATA MANUFACTURING CO (JP)

H01S5/183; H01S5/024

WO2021124968A1

2021-06-24

JP2004207380A	2004-07-22
JPH0321090A	1991-01-29
CN102694341A	2012-09-26
JP2005086054A	2005-03-31
JP2015103727A	2015-06-04
US20170025815A1	2017-01-26

KITAYAMA Mikio et al. (JP)

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