Title:
VOLTAGE GENERATION CIRCUIT AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2024/040758
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductor circuit design, and provides a voltage generation circuit and a memory. The voltage generation circuit comprises: a voltage output module, configured to receive a reference voltage, generate a first output voltage, and provide the first output voltage to a power supply node, the power supply node being used to be connected to a load so as to supply power to the load; a voltage stabilization module, configured to receive the reference voltage, and generate and output a control signal; a compensation module, configured to receive a power supply voltage, a flag signal and a control signal, connect in response to the flag signal, and provide a second output voltage to the power supply node in response to a control signal-based voltage value, so as to cause the voltage of the power supply node to return to the first output voltage, the flag signal indicating that the load is in operation. The accuracy of the voltage generation circuit can be improved.
Inventors:
QIN JIANYONG (CN)
Application Number:
PCT/CN2022/132407
Publication Date:
February 29, 2024
Filing Date:
November 17, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C11/4074
Domestic Patent References:
| WO2022105890A1 | 2022-05-27 |
Foreign References:
| CN102385910A | 2012-03-21 | |||
| CN109270978A | 2019-01-25 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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