WORKING PLATFORM OF ION IMPLANTER

WIPO Patent Application WO/2021/196397

A1

A working platform of an ion implanter, comprising an EFEM (1), two Loadlocks (21/22), a VTM (3) and a PTM (4); the EFEM (1), the Loadlocks (21/22) and the VTM (3) are sequentially arranged in a first direction, the two Loadlocks (21/22) are provided in parallel between the EFEM (1) and the VTM (3), the PTM (4) is connected to the VTM (3) in a second direction, the first direction is not parallel to the second direction, and the VTM (3) is used for transferring a silicon wafer between each Loadlock (21/22) and the PTM (4) in a vacuum state; the PTM (4) is used for processing the silicon wafer in vacuum by using an ion beam; the PTM (4) comprises a scanning robot (42) and an ion beam collection device (43), and the ion beam collection device (43) is located at the end of the PTM (4) away from the scanning robot (42) and is spaced apart from the VTM (3) in the second direction. Silicon wafers are thus protected from contaminants deposited in the ion beam collection device (43).

XIA SHIWEI (CN)
CHEN JIONG (CN)
WANG ZHANZHU (CN)
YANG LIJUN (CN)
WANG HUI (CN)
JEFF BOEKER (CN)
HONG JUNHUA (CN)
LI XUAN (CN)
CHEN KELU (CN)
LIU ZHIFENG (CN)

PCT/CN2020/094097

October 07, 2021

June 03, 2020

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LINGANG KINGSTONE SEMICONDUCTOR COMPANY LTD (CN)
KINGSTONE SEMICONDUCTOR JOINT STOCK COMPANY LTD (CN)

H01J37/317; H01L21/677

CN102122627A	2011-07-13
KR20050004366A	2005-01-12
KR20070081036A	2007-08-14
US6313469B1	2001-11-06
US5486080A	1996-01-23
JPH11260889A	1999-09-24
CN105206493A	2015-12-30
CN101964319A	2011-02-02
CN1532886A	2004-09-29
CN1669136A	2005-09-14

SHANGHAI BESHINING LAW OFFICE (CN)

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