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WO/2022/255252A1 |
The semiconductor device comprises a base substrate (UK), a first light-reflecting portion (RF) positioned above the base substrate (UK), a first mask (6) positioned above the first light-reflecting portion (RF), a base semiconductor por...
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WO/2022/255829A1 |
The present invention relates to a laser diode package comprising: a ceramic substrate (110) formed in a cube shape; and a laser diode (120) mounted on one surface of the ceramic substrate (110), wherein the ceramic substrate (110) is mo...
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WO/2022/256131A1 |
A laser device for use with a display including a plurality of pixels is disclosed. The laser device includes a gain section and a modulator. The gain section is electrically coupled with a first current or voltage source. The gain secti...
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WO/2022/253656A1 |
An active optical sensor system (2) comprises a first and second light emitter (10a, 10b), a first and a second energy storage element (11a, 11b) and control circuitry (3, 17a, 17b, 18). The control circuitry (3, 17a, 17b, 18) is configu...
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WO/2022/248420A1 |
The invention relates to a method for manufacturing optoelectronic components (10, 11), the method comprising: - providing at least one semiconductor wafer (1), which has a semiconductor layer sequence (2) and a plurality of mutually adj...
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WO/2022/249360A1 |
[Problem] To prevent a decrease in oscillation efficiency of laser beams and a decrease in conversion efficiency of light wavelengths due to thermal interference. [Solution] A laser element according to the present invention is provided ...
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WO/2022/251057A1 |
A synthesizer includes a first resonator mirror, a second resonator mirror, and a gain medium disposed within a laser resonator cavity defined by the first resonator mirror and the second resonator mirror. The synthesizer includes a satu...
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WO/2022/249357A1 |
[Problem] To suppress diffraction loss during laser resonance. [Solution] This laser element comprises: a laminated semiconductor layer that has a first reflection layer for a first wavelength and an active layer that performs surface em...
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WO/2022/250118A1 |
This light source module (100) comprises: a first light emitting element (21), a second light emitting element (22), and a third light emitting element (23) that emit light of wavelengths different from one another; a cladding (3); and a...
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WO/2022/247947A1 |
An optical module (200), comprising a light emitting assembly (400) configured to generate and output signal light and comprising a laser (600). The laser (600) comprises a laser chip (610) configured to generate signal light; and a cera...
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WO/2022/247184A1 |
A tunable laser device, comprising a housing (10), and a light source module (20), an optical processing module (30) and a wavelength locking module (40), which are arranged in the housing (10), wherein the housing (10) has an optical in...
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WO/2022/248767A1 |
According to an example aspect of the present invention, there is provided an optical waveguide arrangement comprising a light source arranged to transmit a light signal to at least one optical waveguide of the optical waveguide arrangem...
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WO/2022/249581A1 |
[Problem] To provide a laser element wherein a plurality of optical elements are integrated to enable suppression of a standing wave of excitation light or oscillation light. [Solution] This laser element comprises: a laminated semicondu...
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WO/2022/249733A1 |
[Problem] To suppress a temperature increase in an optical resonator or prevent damage to the optical resonator resulting from laser beam focusing. [Solution] A laser element according to the present invention is provided with: a semicon...
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WO/2022/250092A1 |
A light source module (100) of the present disclosure comprises: a first light emitting element (21), a second light emitting element (22), and a third light emitting element (23) that emit light having mutually different wavelengths; cl...
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WO/2022/248301A1 |
An optoelectronic component comprises a stacked arrangement including a photonic crystal (1) and a gain medium (3). The gain medium comprises a layer sequence composed of two quantum wells (30) and at least one tunnel diode (31) and is s...
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WO/2022/251843A1 |
Disclosed herein are single element dot pattern projectors with a meta-optics. The projectors include a laser light source and a metasurface chip integrated onto the laser light source. The metasurface chip includes metasurface elements ...
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WO/2022/248487A1 |
In at least one embodiment, the optoelectronic semiconductor chip (1) comprises: β a carrier (2), β a semiconductor layer sequence (3) on the carrier (2) having at least one active zone (33) for generating radiation (R), β a layer ...
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WO/2022/245236A1 |
According to an aspect, there is provided an optical memory unit. The optical memory unit comprises first and second slave lasers configured, respectively, to output first and second laser beams having a first frequency when injection-lo...
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WO/2022/242591A1 |
A laser temperature control method, comprising: greatly regulating a target working temperature of a refrigerant in real time according to the change of laser heat load, next, finely regulating, by means of PID control, the target workin...
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WO/2022/244230A1 |
This optical module comprises: a base (10) having a flat surface (11); a first optical element (20) and a second optical element (30) disposed facing each other on the flat surface (11) of the base (10), the first and second optical elem...
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WO/2022/243014A1 |
A method of manufacturing a semiconductor device (10) comprises epitaxially growing (S100) a sacrificial layer (105) over a GaN substrate (100), epitaxially growing (S110) a first semiconductor layer (120) over the sacrificial layer (105...
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WO/2022/245684A1 |
A method of forming a high voltage optical transformer includes forming a via through a transparent carrier wafer, forming a conductive layer within the via, bonding a solid state lighting (SSL) package to a first side of the carrier waf...
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WO/2022/244440A1 |
This optical module comprises a support plate and an electron cooling module. The electron cooling module has a heat dissipation plate placed on a first main surface of the support plate, a heat absorption plate, and a plurality of semic...
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WO/2022/243294A1 |
The invention relates to a semiconductor laser device (10) comprising a surface emitting semiconductor laser element (105) having a GaN-containing compound semiconductor layer and a converter (120). The converter is adapted to convert a ...
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WO/2022/243025A1 |
The invention relates to a method for producing a semiconductor laser diode, comprising the following steps: - providing a growth substrate (1) having an epitaxy surface (2); - introducing at least one structure (10) at least into one fa...
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WO/2022/244674A1 |
Provided is a light-emitting device capable of generating a light pulse that has a short light pulse width and a high peak value. The light-emitting device has a semiconductor light-emitting element obtained by laminating, on a semicondu...
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WO/2022/244475A1 |
In this semiconductor element 1, a first electrode 30 is formed at the same time as a second electrode 40 having a greater height than the first electrode 30, and the height positions h1, h2 of the top surfaces 30a, 40a of the first elec...
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WO/2022/243344A1 |
The invention relates to a semiconductor laser (10) comprising a surface-emitting semiconductor laser element (105) and a converter (210) which can convert a wavelength of laser radiation (115) emitted from the surface-emitting semicondu...
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WO/2022/246374A1 |
Heatsinking in laser devices may be improved via a device, including: a header disk having a first face with a circumference; a header post that is thermally conductive, and having: a second face connected to the first face coterm inousl...
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WO/2022/243297A1 |
The invention relates to a semiconductor laser (10) comprising a semiconductor layer arrangement (112), having an active zone (115) for radiation generation, as well as comprising a first resonator mirror (125), a second resonator mirror...
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WO/2022/244229A1 |
A Mach-Zehnder switch (4) in this multiwavelength laser device (100) can change a phase difference between multiwavelength light that passes through a first waveguide and multiwavelength light that passes through a second waveguide, to a...
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WO/2022/244121A1 |
The optical circuit according to the present disclosure provides a novel optical transmitter configuration that simultaneously achieve high output performance and high quality transmission characteristics irrespective of variation in cle...
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WO/2022/238434A2 |
An optoelectronic lighting device which comprises at least one optoelectronic light source (1) for producing light, at least one converter (3) for producing converted light by converting the light provided by the light source (1), and a ...
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WO/2022/237285A1 |
A laser diode control method and control system, and a laser device. The control method comprises: using a first driving voltage and a first duty cycle to drive a laser diode to start working; acquiring the working time of the laser diod...
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WO/2022/240527A1 |
A laser device includes a laser (600) and a controller (622). The laser has an optical cavity (602) that includes an active gain section (604) and a phase shifter (606). The controller is configured to excite the active gain section to l...
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WO/2022/239322A1 |
The present technology provides a surface emitting laser element that can reduce variations in emitted light intensity between a light emission part adjacent to a second region and a light emission part other than said light emission par...
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WO/2022/239330A1 |
The present technology provides a surface-emitting laser capable of stabilizing light emission characteristics with respect to variations in drive temperature.γThe present technology provides a surface-emitting laser provided with firs...
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WO/2022/239208A1 |
An optical semiconductor device (100) according to the present disclosure comprises: at least one laser (21); multiple EA modulators (41, 42) having absorption peak wavelengths different from one another, the output of the laser (21) bei...
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WO/2022/239653A1 |
A semiconductor light-emitting device (10) comprises: a semiconductor laser element (20) that includes a surface (20A) from which laser light is emitted; a resin member (80) that is transparent and covers the surface (20A) of the semicon...
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WO/2022/235390A1 |
A laser chip is described which comprises a plurality of gain areas. Each gain area comprises a ridge waveguide and a wavelength locking element, where the wavelength locking element in a gain area defines the output wavelength character...
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WO/2022/233325A1 |
A light source assembly for a laser radar, and the laser radar. The light source assembly performs beam splitting on laser to be processed of a laser device (10, 10') by using a beam splitter (20, 20'), and uses a light amplification arr...
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WO/2022/235615A1 |
Multilayer structures containing porosified or electropolished layers of indium phosphide or gallium arsenide are described. Further disclosed are methods for preparing and using such multilayer structures, for example, in vertical cavit...
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WO/2022/236231A1 |
Implementing systems and methods for operating a LiDAR system. The methods comprise: supplying current from a laser diode bar driver of the LiDAR system to a light source of the LiDAR system; passing the current through a laser diode bar...
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WO/2022/233946A1 |
The manufacture of surface emitting lasers that include an optical metastructure are described. For example, in accordance with some implementations, a method includes providing a sequence of semiconductor layers and processing the seque...
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WO/2022/231296A1 |
An optical element package according to the present embodiment comprises: a substrate having wirings and at least one optical path formed thereon; a light-emitting element providing light via the optical path; a light-receiving element r...
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WO/2022/228263A1 |
The present invention provides a coherent Ising machine based on an on-chip optical microcavity in a whispering gallery mode. The coherent Ising machine mainly uses an optical microcavity in which a second laser processing apparatus (non...
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WO/2022/232076A1 |
A visible light source includes a substrate, a vertical-cavity surface-emitting laser including an active semiconductor region configured to emit infrared light and a first reflector configured to reflect the infrared light emitted by th...
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WO/2022/231991A1 |
A visible light source (1802) includes a substrate, a first reflector (1822) and a second reflector (1830) configured to reflect infrared light and arranged vertically to form a vertical cavity on the substrate, an active region (1824) i...
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WO/2022/230053A1 |
In this invention, first to third lead pins (2b to 2e) penetrate through a metal stem (1). A support block (4) is provided on the metal stem (1). A temperature control module (5) is mounted on a side surface of the support block (4), and...
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