| Document |
Document Title |
|
WO/2022/180081A1 |
The invention relates to a method for producing an optoelectronic semiconductor component (1), comprising the following steps: A) providing a semiconductor body (10), comprising successively in a vertical direction (Y): a first layer (10...
|
|
WO/2022/179226A1 |
An EML chip (600) and an optical module (200). The EML chip (600) is for use in the optical module (200). The EML chip (600) comprises: a substrate (601); a DFB-MQW layer (602), provided above the substrate (601); an EAM-MQW layer (603),...
|
|
WO/2022/179792A1 |
In at least one embodiment, the semiconductor emitter (1) comprises a semiconductor layer sequence (2), which has: - a plurality of active zones (31, 32, 33) each having at least one quantum well layer (22) for generating laser radiation...
|
|
WO/2022/181085A1 |
The purpose of the present invention is to provide a surface-emitting laser capable of realizing a further decrease in diffraction loss, a further enhancement in heat dissipation effect, a further enhancement in yield, and a further enha...
|
|
WO/2022/181542A1 |
A semiconductor device manufacturing method according to the present disclosure comprises: a step for preparing a laminate 10 which has a plurality of semiconductor layers 11, 12, 13 and a first support 20 which has an upper surface 20a,...
|
|
WO/2022/181432A1 |
The present invention provides a technology for producing a rare-earth-element-doped nitride element having higher brightness and better light-emitting characteristics compared to the prior art, in which a rare-earth-element-doped nitrid...
|
|
WO/2022/176987A1 |
A light emitting device comprising: a substrate having a first surface; a cladding positioned on the first surface of the substrate; a core positioned in the cladding; a lid body positioned on the cladding; a first light emitting element...
|
|
WO/2022/175159A1 |
Disclosed is a radiation-emitting semiconductor component (1) comprising: - at least two radiation-emitting semiconductor chips (2), each of which is designed to emit electromagnetic radiation over an emitter region (3); and - a stack of...
|
|
WO/2022/176948A1 |
The present invention comprises a control unit which: performs stop control for causing a power supply circuit to stop supply of a supply current upon determining that the supply current exceeds a predetermined threshold value; determine...
|
|
WO/2022/175031A1 |
An attachment (10) for a laser module having a laser diode (90) comprises a sleeve (20), which has a proximal end portion (26) and a distal end portion (27) and a central axis (x) extending from the proximal end portion (26) to the dista...
|
|
WO/2022/176000A1 |
The optical communication module disclosed in the present application comprises: a plate-shaped stem (1); a plurality of leads (2) penetrating the stem (1) via an insulating member (1a); a connecting conductive member (10) formed on the ...
|
|
WO/2022/174629A1 |
A light emitting chip (10) and a laser, relating to the technical field of opto-electronics. The light emitting chip (10) comprises a first electrode (101), a chip body (102), an insulation layer (103), and a second electrode (104) which...
|
|
WO/2022/176597A1 |
A wavelength converter (10) comprises a phosphor ceramic (11) including a first phosphor that emits fluorescence due to a parity forbidden transition, and a phosphor portion (12) including a second phosphor that emits fluorescence due to...
|
|
WO/2022/176483A1 |
A surface light-emitting element is provided which enables high-accuracy detection of the optical properties of emission light, and/or enables adjustment of the optical properties of emission light. This surface light-emitting element ...
|
|
WO/2022/176482A1 |
The present invention provides a surface-emitting laser that can be produced at a good yield and has a configuration for confining current and light. The surface-emitting laser comprises a first structure including a first multilayer f...
|
|
WO/2022/176434A1 |
[Problem] To provide: a laser element which has a concave mirror structure and which exhibits excellent optical characteristics; a laser element array; and a laser element manufacturing method. [Solution] The laser element according to t...
|
|
WO/2022/176896A1 |
A wavelength control device (20) comprises: a wavelength correction unit (6) that outputs an error signal (Serr1) to a laser light source (12) and causes same to emit laser light (L1) with a wavelength based on the error signal (Serr1); ...
|
|
WO/2022/176992A1 |
A light emitting device comprising: a substrate having a first surface; a cladding positioned on the first surface of the substrate; a core positioned in the cladding; a lid body positioned on the cladding; a first light emitting element...
|
|
WO/2022/177847A1 |
A semiconductor laser may include an active region having a longitudinal axis, a rear facet end and a front facet end. The front facet end emitting an output beam of the semiconductor laser. The semiconductor laser may include a pluralit...
|
|
WO/2022/174927A1 |
Described is a semiconductor optical amplifier (600, 900) comprising an active layer extending between an input (601, 901) and an output (602, 902) of the optical amplifier, the active layer having a noise suppression part (603, 903) ope...
|
|
WO/2022/172797A1 |
A nitride semiconductor light-emitting element (100) comprises a semiconductor layered-body (100S). The semiconductor layered-body (100S) includes: an N-type first cladding layer (102); an N-side guide layer (104); an active layer (105);...
|
|
WO/2022/172756A1 |
The present invention provides an optical semiconductor device comprising a mesa that, e.g., projects from the surface of a base in a first direction and that extends in a direction intersecting the first direction, and a heater layer ha...
|
|
WO/2022/171706A1 |
The invention relates to an optoelectronic component, comprising a substrate carrier (10) and a light source (30), which is disposed on the substrate carrier and has a main emission direction (31). A cap (20) having an optical element is...
|
|
WO/2022/172663A1 |
The present invention addresses the problem of providing a vertical cavity surface emitting laser element having a concave mirror-type structure and exhibiting excellent polarization controllability. A vertical cavity surface emitting la...
|
|
WO/2022/172374A1 |
Provided are: a composite light generation device for which miniaturization is achieved, production efficiency is high, and manufacturing costs are reduced; and a manufacturing method therefor. Due to a plurality of individual pedestal...
|
|
WO/2022/173369A1 |
An optical device 1 comprises a display 2 comprising display circuitry and an optical sensor 3 arranged behind the display 2, the optical sensor 3 comprising an emitter for emitting light through the display 2 and a receiver for receivin...
|
|
WO/2022/173366A1 |
There is provided an array of light emitting elements (300) integrated with meta-surfaces (302). The meta-surfaces are constructed from a semiconductor alloy comprising at least two different semiconductors. The composition of the semico...
|
|
WO/2022/172679A1 |
A semiconductor laser element (1) comprises: a substrate (10) having a projecting portion (11) on an upper surface thereof; a first semiconductor layer (20) disposed over the substrate (10); a light emitting layer (30) disposed over the ...
|
|
WO/2022/171447A1 |
The invention relates to a method for producing a plurality of semiconductor lasers (1), comprising the steps of: a) providing a substrate (25) having a semiconductor layer sequence (2) and having a plurality of component regions (10), e...
|
|
WO/2022/172680A1 |
A semiconductor laser element (1) comprises a substrate (10), a first semiconductor layer (20) disposed over the substrate (10), a light emitting layer (30) disposed over the first semiconductor layer (20), a second semiconductor layer (...
|
|
WO/2022/171375A1 |
The present invention relates to an extended-cavity diode laser component, in particular to a monolithically integrated ECDL (mECDL) having a Bragg section comprising a surface grating, and to a corresponding method for production. A dio...
|
|
WO/2022/172919A1 |
An optical device (10) comprises, for example: a multimode interference waveguide (11) which has a first end (11a) in a first direction (D1) and a second end (11b) in the direction opposite to the first direction; a first port (p1) which...
|
|
WO/2022/168942A1 |
This optical device comprises, for example: at least one optical component that reflects first light, traveling in a first direction, in a second direction and transmits second light traveling in the second direction, and generates leaka...
|
|
WO/2022/165582A1 |
In a general aspect, a device is disclosed for providing a reference frequency of light. The device includes a housing having a first opening and a second opening. A first optical window covers the first opening and is coupled to the hou...
|
|
WO/2022/168934A1 |
An optical device comprises, for example: a base (21a); a light-emitting element (32) that is provided on the base (21a) and outputs laser light; a plurality of optical components that are provided on the base (21a) and lead the laser li...
|
|
WO/2022/165900A1 |
The present invention provides a semiconductor active and passive integrated coupling method used for performing high-precision alignment coupling on a laser diode (1) and a passive waveguide (7) on a silicon substrate (4), and comprisin...
|
|
WO/2022/167930A1 |
A CBC system includes an array of beam sources generating coherent beams directed towards a target. The beam sources have associated adjustable phase modulators and beam steering arrangements. For each of the beams in a subset of the bea...
|
|
WO/2022/166861A1 |
A laser apparatus (401, 501, 601), which is applied in the field of optical communication. The laser apparatus comprises: a laser region, an electrical isolation region, and a power adjustment region (402, 502, 602); when a laser bias vo...
|
|
WO/2022/169986A1 |
A high-power tunable laser for outputting wavelength tuned laser light includes a gain medium configured to receive light, amplify a light intensity of light in the gain medium and emit light having an amplified light intensity. The gain...
|
|
WO/2022/165819A1 |
Provided are a light-emitting die, a transmission module (11), a sensing apparatus (10) and an electronic device (1). The light-emitting die comprises a sensing light source (22) and a switch transistor (23), the sensing light source (22...
|
|
WO/2022/167551A1 |
A method of transfer printing. The method comprising: providing a precursor photonic device (200), comprising a substrate (210) and a bonding region, wherein the precursor photonic device (200) includes one or more alignment marks (101, ...
|
|
WO/2022/165899A1 |
The present invention provides a semiconductor manufacturing method, for growing quantum wells having different layer thicknesses in the same plane during a single semiconductor epitaxial deposition process, comprising the following step...
|
|
WO/2022/165901A1 |
The present invention provides a monolithic integrated waveguide device, comprising laser sections and modulator sections; the laser sections each comprise a wavelength selection element; the laser sections and the modulator sections eac...
|
|
WO/2022/167594A1 |
The invention relates to a laser diode assembly for a laser projection device, having a carrier; a laser diode array arranged on the carrier and comprising a first light group with a plurality of first laser diodes and a second light gro...
|
|
WO/2022/163237A1 |
This semiconductor laser element (10) comprises a substrate (21) and a semiconductor laminate (10S). The semiconductor laminate (10S) has an N-side semiconductor layer (22), an active layer (23), a P-side semiconductor layer (24), and a ...
|
|
WO/2022/163176A1 |
The present invention reduces the generation of heat in a nitride semiconductor light-emitting element and improves slope efficiency. A nitride semiconductor light-emitting element according to one aspect is provided with: a first cond...
|
|
WO/2022/161714A1 |
A surface-emitting semiconductor laser (10) comprises a first semiconductor layer (110) of a first conductivity type, an active zone (115) which is suitable for generating electromagnetic radiation (20), an ordered photonic structure (13...
|
|
WO/2022/163031A1 |
This semiconductor laser element is provided with: a first emitter having a first active layer and a first guide layer; and a second emitter having a second active layer and a second guide layer. The thickness of the first emitter differ...
|
|
WO/2022/163245A1 |
This optical resonator (2) that resonates a plurality of light beams having mutually different wavelengths comprises a light source (13), a diffraction grating (20), an output coupler (14), and an optical system (25). The light source (1...
|
|
WO/2022/162225A1 |
A random number generator (100) comprising a vertical cavity surface emitting laser, VCSEL (101), a mode separator (102) and a photodetector (103), the random number generator further comprising a power source (105) to drive the VCSEL in...
|
