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WO/2022/204044A1 |
Embodiments of the present disclosure relate to a sensor apparatuses with stacked metasurfaces suitable for small form factors. The apparatus is a sensing apparatus operable to be used in sensing applications. The apparatus includes a li...
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WO/2022/202448A1 |
This nitride semiconductor light emitting element (100) is provided with an N-type cladding layer (102), an N-side first guide layer (103), an N-side second guide layer (104), an active layer (105) which comprises a well layer (105b) and...
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WO/2022/204642A1 |
The present disclosure relates to systems and methods that provide an accurate angle measurement of a rotatable mirror. An example method includes receiving, from a detector device, a reflected light signal. The reflected light signal is...
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WO/2022/201054A1 |
A laser module includes a gain chip, temperature sensors, a case, and a thermoelectric cooler (TEC). The gain chip emits a laser beam. One of the temperature sensors measures a first temperature of the gain chip and is encompassed by the...
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WO/2022/201772A1 |
Provided is a surface emitting laser which makes it possible for the confinement effect for light and current to differ between at least two mesa structures, and which makes it possible to increase productivity. The present invention p...
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WO/2022/201571A1 |
This light emitting device is provided with, on the same substrate: a light emitting element; a switch element that is connected in series with one electrode of the light emitting element and drives the light emitting element; a capaciti...
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WO/2022/200292A1 |
According to a first aspect, the present disclosure relates to a semiconductor sub-assembly comprising a semiconductor device comprising: a semi-insulating substrate (201); a first section (210) configured to emit light; at least a secon...
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WO/2022/204669A1 |
Embodiments herein describe an ASIC design where certain portions of the laser driver are controllable by the user. In one embodiment, the ASIC may include one or more pins which provide a connection interface where the user can electric...
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WO/2022/194967A1 |
A method of preparing a distributed feedback laser. The distributed feedback laser comprises an active waveguide with a reflective facet. The method comprises: etching a grating into the distributed feedback laser; and etching an output ...
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WO/2022/197570A1 |
A laser such as a vertical-cavity surface-emitting laser (VCSEL) emits laser light. A beam shaping metasurface is configured to apply a beam shaping profile to the laser light to generate shaped laser light in response to receiving the l...
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WO/2022/193756A1 |
A laser device, a light source module and a laser radar. The laser device comprises: a light-emitting lamination, comprising a first reflector (105), an active region (104) and a second reflector (102), which are sequentially arranged in...
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WO/2022/197195A1 |
The invention relates to a method for manufacturing a two-dimensional laser diode array comprising preparing a structured gallium nitride bulk substrate, a lower cladding layer, a lower light guide layer, a light-emitting layer, electron...
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WO/2022/197115A1 |
One embodiment of the present invention provides a photonic crystal semiconductor laser device comprising: an n-type cladding layer formed on a first surface of an n-type first substrate; a guide layer formed on the n-type cladding layer...
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WO/2022/196062A1 |
This light-emitting device makes it possible to detect a fault in a light-emitting circuit without affecting the waveform of a pulse current to be applied to a light source element. The light-emitting device comprises a light-emitting ci...
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WO/2022/196137A1 |
Provided is a synthesized light generation device for which laser diode output is stable and which enables miniaturization and reduces manufacturing costs. A synthesized light generation device (100) enables stabilization of the output...
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WO/2022/016281A9 |
A semiconductor laser comprising a single mode laser cavity having a stack of semiconducting layers defining a transversal p-n junction is provided. A plurality of electrodes are coupled to corresponding sections of the laser cavity alon...
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WO/2022/196394A1 |
A photonic crystal surface-emitting laser comprising a light emitting region for emitting light in a direction intersecting an in-plane direction, and a current constriction region which is adjacent to the light emitting region in the in...
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WO/2022/193886A1 |
An optical modulation and amplification apparatus (1201), an optical module (1301), an optical network unit (2) and an optical communication system, which are used for realizing the insensitivity of the optical modulation and amplificati...
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WO/2022/193076A1 |
Provided are a vertical-cavity surface-emitting laser and an electronic device. The vertical-cavity surface-emitting laser comprises: a substrate, and a second reflector, a second isolation layer, an active layer, a first isolation layer...
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WO/2022/194671A1 |
The invention inter alia relates to radiation emitter (100) comprising an emitter section (120) and an optical pump section (110) that is capable of generating pump radiation (Rp) in order to excite the emitter section (120) to emit sing...
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WO/2022/194968A1 |
An optical waveguide structure. In some embodiments, the optical waveguide structure includes a semiconductor waveguide having a waveguide ridge, and a heater. The waveguide ridge may have a varying dopant concentration across its cross-...
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WO/2022/197000A1 |
A lateral VCSEL chip, a VCSEL array and a manufacturing method therefor are disclosed. According to one aspect of the present invention, provided is a VCSEL array comprising: a substrate; an adhesive layer applied onto the substrate; a V...
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WO/2022/197646A1 |
Semiconductors lasers are disclosed having an active region having a longitudinal axis, a first facet end, and a second facet end. The second facet end emitting the main output beam of light from of the respective semiconductor laser. Th...
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WO/2022/194453A1 |
The invention relates to a method for producing an optoelectronic semiconductor chip, component, comprising the following steps: - providing an epitaxial semiconductor layer sequence (1) with an active zone (3), which is configured to ge...
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WO/2022/194807A1 |
A vertical emission cascade laser (10) comprising a lower cladding layer (14), active region layers (15) and an upper cladding layer (16) collectively forming an in-plane waveguide. The in-plane waveguide has a higher loss and/or lower g...
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WO/2022/189869A1 |
A surface-emitting laser array includes a substrate (101), a sub-arrays disposed on the substrate (101), the sub-arrays including a surface-emitting laser devices electrically connected to each other in parallel to emit light through the...
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WO/2022/191774A1 |
According to embodiments of the present invention, an optical device is provided. The optical device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer having a beam structure that is subjected to a ten...
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WO/2022/188990A1 |
The present invention relates to an electrically tunable photonic resonator device for a component having a fast and flat actuation response, comprising: - At least one optical waveguide with an optical interface for coupling in laser li...
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WO/2022/190763A1 |
A laser device comprising: a support; a first heatsink; a plurality of laser light sources mounted to the support; and a plurality of electrodes spanning between the plurality of laser light sources and the first heatsink. Each of the pl...
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WO/2022/190352A1 |
This semiconductor device comprises a semi-insulating substrate (101) formed from a III-V group compound semiconductor, and a first semiconductor layer (102) formed on the substrate (101) from a III-V group compound semiconductor doped w...
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WO/2022/188451A1 |
A semiconductor laser bar (10) and a manufacturing method therefor, and an electronic device. The semiconductor laser bar (10) comprises a substrate (100), a first insulating layer (200), a plurality of semiconductor laser units (300), a...
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WO/2022/188581A1 |
An electroabsorption modulated laser (EML) chip (600) and an optical module (200). The EML chip (600) is used for the optical module (200). The EML chip (600) comprises: a substrate (601), an EAM-MQW layer (603), a DFB-MQW layer (602), a...
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WO/2022/190275A1 |
A semiconductor laser device (100) equipped with a cladding layer (3) of the first conductive type, a first conductive type-side light guide layer (61), an active layer (7), a second conductive type-side light guide layer (81), a claddin...
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WO/2022/190799A1 |
A light emission device (2) comprises: a laser light source (11); a power storage element (33) for supplying drive-current to the laser light source (11); a switch element (34) that is connected in series to the laser light source (11); ...
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WO/2022/192199A1 |
In one embodiment, a lidar system includes a light source configured to emit (i) local-oscillator light and (ii) pulses of light, where each emitted pulse of light is coherent with a corresponding temporal portion of the local-oscillator...
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WO/2022/185923A1 |
A light emission device (2) comprises: a laser beam source (11); an electricity storage element (33) for supplying a drive current to the laser beam source (11); a plurality of switching elements (34a, 34b) that are connected in series t...
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WO/2022/186293A1 |
This laser oscillator (10) comprises: a semiconductor laser beam source (21); a drive power source (22) for driving the semiconductor laser beam source by means of voltage of a charged capacitor (24); a switch unit (23) for switching a s...
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WO/2022/185508A1 |
An optical semiconductor device which is provided with: a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a projection part (1a); intermediate layers (2) of a second conductivity type, the int...
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WO/2022/185766A1 |
The present technology provides a surface emitting laser in which it is possible to reduce the diffraction loss of light in an embedding layer while improving the flatness of the surface of the embedding layer. A surface emitting laser...
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WO/2022/185765A1 |
The present technology provides a surface-emitting laser with which it is possible to achieve a current constriction in at least a tunnel junction layer, while suppressing a characteristics change in the tunnel junction layer. A surfac...
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WO/2022/185514A1 |
A light source device (10) is provided with a first light source (15) and a second light source (14) which respectively emit first light (L5) and second light (L4), a spectrum of the second light (L) being different from a spectrum of th...
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WO/2022/185518A1 |
This optical device comprises a photonic crystal body (101), an optical waveguide (102), an active region (103), an active material (104), and a light source (105). The active region (103) is formed on the optical waveguide (102), and th...
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WO/2022/184886A1 |
The present invention relates to a semiconductor optoelectronic device (10) comprising a junction (12) formed from a stack of layers defining an n-doped region, an intermediate region and a p-doped region, at least one layer, called the ...
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WO/2022/185970A1 |
The present invention suppresses as much as possible an individual difference in the strength of output laser light for each semiconductor device while suppressing the occurrence of stray light inside a package of a semiconductor laser d...
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WO/2022/184108A1 |
A modulating amplifier, a light-emitting apparatus, an optical network unit, and an optical line terminal. The modulating amplifier comprises a device body and a planar waveguide layer. The device body is divided into a modulating region...
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WO/2022/181723A1 |
A two-dimensional photonic crystal laser comprising: a pair of electrodes (a first electrode 171, a second electrode 172); an active layer (11) provided between the pair of electrodes to produce a predetermined wavelength of light throug...
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WO/2022/179187A1 |
A voltage-adaptive laser driving circuit and a control method thereof. The circuit comprises: a switching power supply (1), a laser (2), a constant current driving circuit (3), a current setting circuit (4), an MCU control circuit (5), a...
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WO/2022/181372A1 |
In this light-emitting device 10 are combined at least a solid-state light-emitting element 3, a first wavelength converter 1A, and a second wavelength converter 2A, said light-emitting device 10 emitting an output light 4. The solid-sta...
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WO/2022/181559A1 |
A semiconductor laser light emitting device (1) comprises a mounting substrate (10), which is an example of a mounting base having a step (11), a submount (20) arranged above the bottom surface of the step (11), and a semiconductor laser...
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WO/2022/181722A1 |
This two-dimensional photonic crystal surface emitting laser (10) is provided with: a two-dimensional photonic crystal layer (12) which, on a plate-shape base material (121), comprises a periodic arrangement of different-refractive index...
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