Title:
RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP2019207300
Kind Code:
A
Abstract:
To provide a resist composition which further improves lithographic characteristics such as roughness reduction, achieves higher sensitivity, and hardly causes film thickness reduction of a pattern, and a resist pattern forming method.SOLUTION: In the resist composition, the total content of an acid generator component and a basic component including a compound represented by general formula (bd1) is specified to 20-70 pts.mass based on 100 pts.mass of a base material component. In the formula (bd1), Rx-Rx, Ry-Ryand Rz-Rzeach represent a hydrocarbon group or a hydrogen atom or may be bonded to each other to form a ring structure; at least one of Rx-Rx, Ry-Ryand Rz-Rzhas an anionic group; and Mrepresents an organic cation.SELECTED DRAWING: None
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Inventors:
ONISHI KOSHI
KOMURO YOSHITAKA
KOMURO YOSHITAKA
Application Number:
JP2018101878A
Publication Date:
December 05, 2019
Filing Date:
May 28, 2018
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD
International Classes:
G03F7/004; G03F7/039; G03F7/20
Domestic Patent References:
| JP2018028574A | 2018-02-22 | |||
| JP2017102267A | 2017-06-08 | |||
| JP2018092159A | 2018-06-14 | |||
| JP2015194703A | 2015-11-05 | |||
| JP2012003249A | 2012-01-05 | |||
| JP2015090457A | 2015-05-11 | |||
| JP2014085515A | 2014-05-12 |
Foreign References:
| WO2017179727A1 | 2017-10-19 |
Attorney, Agent or Firm:
Sumio Tanai
Matsumoto
Ryu Miyamoto
Masato Iida
Matsumoto
Ryu Miyamoto
Masato Iida