Title:
【発明の名称】赤外線,可視光線および紫外線用アンチモン化インジウム(InSb)光検出装置および構造
Document Type and Number:
Japanese Patent JP2998994
Kind Code:
B2
Abstract:
The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all native oxides of indium and antimony therefrom. A passivation layer (26) is then formed on the surface (22) of a material such as silicon dioxide, silicon suboxide and/or silicon nitride which does not react with InSb to form a structure which would have carrier traps therein and cause flashing. The device (10) is capable of detecting radiation over a continuous spectral range including the infrared, visible and ultraviolet regions.
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Inventors:
Kasai, Ichiro
Toman, John Earl
Toman, John Earl
Application Number:
JP50099894A
Publication Date:
January 17, 2000
Filing Date:
May 27, 1994
Export Citation:
Assignee:
Santa Barbara Research Center
International Classes:
H01L31/0264; H01L31/0216; H01L31/0304; H01L31/103; (IPC1-7): H01L31/0264
Domestic Patent References:
| JP61271844A | ||||
| JP60136273A |
Attorney, Agent or Firm:
Takehiko Suzue (2 outside)