Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
層間絶縁膜の成膜方法および層間絶縁膜
Document Type and Number:
Japanese Patent JP5607394
Kind Code:
B2
More Like This:
JPH07176627FABRICATION OF SEMICONDUCTOR DEVICE
WO/2023/170751METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS
JP2606143SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Inventors:
Kaoru Ohashi
Shuji Nagano
Hideharu Shimizu
Takeshi Kada
Hisakatsu Sugawara
Application Number:
JP2010059325A
Publication Date:
October 15, 2014
Filing Date:
March 16, 2010
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
TAIYO NiPPON SANSO CORP.
Tri Chemical Laboratories, Inc.
International Classes:
H01L21/318; C23C16/34; C23C16/509
Attorney, Agent or Firm:
Masatake Shiga
Mitsuyoshi Suzuki
Shunsuke Fushimi



 
Previous Patent: フルオレン誘導体およびその製造方法

Next Patent: 樹脂製組立構造体