Title:
炭化珪素半導体素子及び炭化珪素半導体素子の製造方法
Document Type and Number:
Japanese Patent JP6395299
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To establish long-lasting drive credibility in a silicon carbide semiconductor element.SOLUTION: A silicon carbide semiconductor element comprises an ohmic contact electrode part 8 composed of a nickel silicide film having surface unevenness with a height difference in of over 20 nm on an nsilicon carbide substrate 1. A boundary of the nsilicon carbide substrate 1 and the nickel silicide film has discontinuous points. The above-described silicon carbide semiconductor element is formed by: providing a nickel film on a surface of the nsilicon carbide substrate 1 having a height difference of less than 10 nm on the surface; and performing annealing on an interface between the nsilicon carbide substrate 1 and the nickel film in the presence of oxygen to provide silicide on the surface of the nsilicon carbide substrate 1.SELECTED DRAWING: Figure 1
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Inventors:
Makoto Utsumi
Yoshiyuki Sakai
Kenji Fukuda
Shinsuke Harada
Mitsuo Okamoto
Yoshiyuki Sakai
Kenji Fukuda
Shinsuke Harada
Mitsuo Okamoto
Application Number:
JP2014185714A
Publication Date:
September 26, 2018
Filing Date:
September 11, 2014
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
Fuji Electric Co., Ltd.
Fuji Electric Co., Ltd.
International Classes:
H01L21/28; H01L21/336; H01L29/06; H01L29/12; H01L29/739; H01L29/78
Domestic Patent References:
| JP2011159405A | ||||
| JP2009146997A | ||||
| JP2005039257A | ||||
| JP2013212951A | ||||
| JP2011054698A | ||||
| JP2011146622A |
Foreign References:
| WO2009054140A1 | ||||
| WO2013021902A1 | ||||
| WO2009019837A1 |
Attorney, Agent or Firm:
Akinori Sakai