Title:
レジスト等のウエハ周縁部からの溶解除去方法
Document Type and Number:
Japanese Patent JP6472760
Kind Code:
B2
Abstract:
A semiconductor device manufacturing method of the present invention includes a coating step of coating a front surface of a wafer with a material containing a solvent, a volatilization step of volatilizing the solvent by heating the material, and a rinse step of jetting an edge rinse solution for removing the material from a first nozzle to a peripheral portion of the front surface of the wafer while rotating the wafer.
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Inventors:
Shoichi Kuga
Application Number:
JP2015562623A
Publication Date:
February 20, 2019
Filing Date:
February 13, 2014
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/027
Domestic Patent References:
| JP2008205286A | ||||
| JP2007134671A | ||||
| JP9162116A | ||||
| JP7211615A | ||||
| JP4239721A | ||||
| JP200091212A | ||||
| JP2948501B2 |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno
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