Title:
パワーデバイス及びその製造方法
Document Type and Number:
Japanese Patent JP6705944
Kind Code:
B2
Abstract:
Disclosed is a power device and a method for manufacturing a power device. The power device comprises: a semiconductor substrate; a first doped region on the semiconductor substrate; a plurality of second doped regions located in a first region of the first doped region; a plurality of third doped regions located in a second region of the first doped region. The plurality of second doped regions are separated with each other at a first predetermined spacing. A first charge compensation structure is formed by the plurality of second doped regions and the first doped region, and the first charge compensation structure and the semiconductor substrate are located on a current channel. The plurality of third doped regions are separated with each other at a second predetermined spacing. A second charge compensation structure is formed by the plurality of third doped regions and the first doped region. The second charge compensation structure is configured to disperse continuous surface electric field of the power device. The power device not only has a stable blocking voltage and an improved reliability, but also has a reduced on-resistance.
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Inventors:
Zhang Shao Hana
Application Number:
JP2019516049A
Publication Date:
June 03, 2020
Filing Date:
October 20, 2017
Export Citation:
Assignee:
Mr. Hangzhou Orchid Fine Electricity Child Fun
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/861; H01L29/868
Domestic Patent References:
| JP2007300034A | ||||
| JP2016021547A | ||||
| JP2015220367A | ||||
| JP2012533167A | ||||
| JP2009004668A |
Foreign References:
| WO2013008543A1 | ||||
| US20150076599 | ||||
| CN105097932A | ||||
| WO2014112239A1 |
Attorney, Agent or Firm:
Asahina Patent Office