CHEMICAL VAPOR DEPOSITION METHOD, AUXILIARY RAW MATERIAL USED THEREFOR, AND FILM AND ELEMENT PREPARED BY THE METHOD

Title:

CHEMICAL VAPOR DEPOSITION METHOD, AUXILIARY RAW MATERIAL USED THEREFOR, AND FILM AND ELEMENT PREPARED BY THE METHOD

Document Type and Number:

Japanese Patent JP3478389

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a film forming technique by which an attractive film can be formed by a CVD method using a β-diketonate complex of a metal.
SOLUTION: This chemical vapor deposition method is characterized by using the β-diketonate complex of the metal and an α,β-unsaturated alcohol.

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Inventors:

Hiroshi Funakubo
Yasushi Murakami
Hideaki Machida

Application Number:

JP2000265521A

Publication Date:

December 15, 2003

Filing Date:

September 01, 2000

Export Citation:

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Assignee:

Hiroshi Funakubo
Yasushi Murakami
Tri Chemical Laboratory Co., Ltd.

International Classes:

C23C16/18; H01L21/205; C23C16/40; C23C16/455; H01L21/316; C23C16/32; C23C16/34; C23C16/44; (IPC1-7): C23C16/18; H01L21/316

Domestic Patent References:

JP722320A
JP669197A
JP11214329A
JP2000183048A
JP2000212744A
JP2003512715A

Attorney, Agent or Firm:

Katsumi Udaka

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