Title:
DRY ETCHING METHOD
Document Type and Number:
Japanese Patent JPH09162164
Kind Code:
A
Abstract:
To obtain a method for dry etching even Al or Al alloy, TiN and Ti at high etching rate while sustaining a high selection ratio with respect to an underlying oxide or resist by providing a simple means for varying the ratio of constitutive components of etching gas.
At the time of dry etching a laminate of Ti 3, TiN 4 and Al-Cu- Ti 5 using a mixture gas of HBr+N2, step etching is employed wherein the content of N2 gas in the mixture gas of HBr+N2 is set between 0-10% for etching the Al-Cu-Ti 5 and increased to 10-20% for etching the Ti 3 and TiN 4.
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Inventors:
MIHARA SATOSHI
KOMADA DAISUKE
KOMADA DAISUKE
Application Number:
JP31507295A
Publication Date:
June 20, 1997
Filing Date:
December 04, 1995
Export Citation:
Assignee:
FUJITSU LTD
FUJITSU VLSI LTD
FUJITSU VLSI LTD
International Classes:
H01L21/302; H01L21/3065; H01L21/3205; H01L21/3213; H01L23/52; (IPC1-7): H01L21/3065; H01L21/3205; H01L21/3213
Attorney, Agent or Firm:
Shoji Kashiwaya (2 outside)
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