Title:
HIGH FREQUENCY CIRCUIT
Document Type and Number:
Japanese Patent JP3536809
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a single balanced mixer with a novel circuit configuration that can be integrated in the inside of a monolithic semiconductor chip.
SOLUTION: A source of a 1st field-effect transistor(FET) 101a and a source of a 2nd FET 103a are connected, a source of a 1st dual gate FET 201a having 1st and 2nd gates and a source of a 2nd dual gate FET 203a having 3rd and 4th gates are connected, the drain of the 1st FET 101a is connected to the 1st gate, the drain of the 2nd FET 103a is connected to the 3rd gate, a 1st high frequency input signal is given to the gate of the 1st or 2nd FET and a 2nd high frequency input signal is given to the 2nd and 4th gates.
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Inventors:
Sakae IN.
Kunihisa, Taketo
Ishikawa, Osamu
Kunihisa, Taketo
Ishikawa, Osamu
Application Number:
JP2000346110A
Publication Date:
June 14, 2004
Filing Date:
November 14, 2000
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H03D7/14; H03D7/00; H03F3/45; (IPC1-7): H03F3/45; H03D7/00; H03D7/14