Title:
半導体素子の製造方法
Document Type and Number:
Japanese Patent JP4722390
Kind Code:
B2
Abstract:
A semiconductor device comprising a metal silicide film with uniform surface morphology and interface morphology and a method of manufacturing the same are provided. The metal silicide film of the semiconductor device exhibits low sheet resistance and excellent thermal stability. Therefore, by using the semiconductor device fabrication method, high performance, high quality semiconductor devices can be manufactured.
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Inventors:
Choi Satoshi Hiiragi
Application Number:
JP2003386008A
Publication Date:
July 13, 2011
Filing Date:
November 14, 2003
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L21/28; H01L21/24; H01L21/285; H01L21/336; H01L21/44; H01L21/8238; H01L27/092; H01L29/417; H01L29/423; H01L29/49; H01L29/78
Domestic Patent References:
| JP10098012A | ||||
| JP2003213407A | ||||
| JP2001358089A | ||||
| JP2003017438A | ||||
| JP7086559A | ||||
| JP7249763A |
Attorney, Agent or Firm:
Mikio Hatta
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii