METHOD AND APPARATUS FOR ETCHING SEMICONDUCTOR SURFACE

Japanese Patent JPS6472530

A

PURPOSE: To etch the surface of Si or Ge, using a few of etching mixture by oxidizing with oxygen a reduction product formed at oxidation to again convert into an oxidizer and liberating a dissolving agent from a reaction product produced at dissociating of a oxidation product. CONSTITUTION: An oxidizer for oxidizing a semiconductor material and agent for dissolving an oxidation product are reacted together to etch a semiconductor surface. In such method these agents are circulated and guided in a carrier medium of sulfuric acid and/or phosphoric acid, a reduction product formed at oxidation is oxidized with O fed to the system to convert into an agent for oxidizing the semiconductor material and dissolving agent is liberated again from a reaction product produced at dissolving the oxidation product, again moved into the carrier medium and brought onto the semiconductor surface to react again, and formed solid reaction product is removed from a circulation line. Nitric acid is e.g. used as the oxidizer and hydrofluoric acid as the dissolving agent.

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ANTON SHIYUNETSUKU
GERUHARUTO BUREEMU
HERENE PURITSUGE
ROBERUTO RUURENDERU
FURITSUTSU KETSUTEERU

JP20958488A

March 17, 1989

August 25, 1988

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WACKER CHEMITRONIC

H01L21/308; C23F1/24; C23F1/46; H01L21/306; (IPC1-7): H01L21/308

Kiyotaka Sasaki (3 outside)

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