METHOD FOR DEVICE SIMULATION AND APPARATUS FOR DEVICE SIMULATION

Japanese Patent JP3926150

B2

PROBLEM TO BE SOLVED: To provide a device simulating apparatus, which is capable of predicting the electrical properties of a device with high precision without deteriorating its physical precision.
SOLUTION: This device simulation apparatus is equipped with a pre- processing unit 1, a model comparison unit 2, a comparison result table 3, a model selection unit 4, and a simulation execution unit 5. The model selection unit 4 compares the contact resistance calculated through a Schottky electrode model with a contact resistance calculated through a contact resistance model. When it is found that the resistance difference between the above contact resistances is below a prescribed value, a device simulation is conducted, taking the contact resistance calculated through the contact resistance model into consideration, so that electrical properties can be predicted more quickly, without deteriorating their accuracy through this simulation than through another simulation in which the Schottky electrode model is used.

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Kazuya Matsuzawa

JP2001397233A

June 06, 2007

December 27, 2001

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Toshiba Corporation

H01L21/00; H01L21/28; G06F17/50; H01L21/02; H01L21/336; H01L29/00; H01L29/78; (IPC1-7): H01L21/00; G06F17/50; H01L21/02; H01L21/28; H01L21/336; H01L29/78

Kenji Yoshitake
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki

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