To provide a method of controlling position by which an ultra-fine pattern can be formed in a highly reproducible state with high accuracy when an auto-alignment mechanism is unusable or the fine adjustment of a sample holder is difficult after the holder is fixed in a lithography step performed in the manufacturing process of a semiconductor device.
A method of controlling a lithography position includes a step of forming intra-shot position coordinate marks 3 (cross-shaped position coordinate marks 4) which have functions of both position detection marks drawn in a plurality of specific areas in a wafer 1, and coordinate detection marks drawn in a plurality of specific areas formed by dividing the wafer 1 into areas and also used as the detecting marks; a step of finding the inclined angle of the wafer 1 and the origin O of coordinates by using the position coordinate marks 3 and 4; and a step of drawing a desired ultra-fine pattern with high accuracy by using new coordinates obtained by performing coordinate transformation through a rotational matrix at the time of controlling the position of the wafer 1 in a lithography step.
ISHII TETSUYOSHI
TOMORI YUICHI
Shigeru Kobayashi