Title:
METHOD OF MANUFACTURING FLASH MEMORY ELEMENTS
Document Type and Number:
Japanese Patent JP2006186300
Kind Code:
A
Abstract:
To provide a method of manufacturing flash memory elements that can be prevented from the occurrence of an ONO penetration phenomenon.
The method of manufacturing flash memory elements includes steps of forming a tunneling oxide film 11 and a floating gate 12 on a semiconductor substrate 10; sequentially stacking a first nitride film 13a, a first oxide film 13b, a second nitride film 13c, a second oxide film 13d, and a third nitride film 13e on the floating gate 12 to form an inter-gate insulating film 13; and forming a control gate 16 on the inter-gate insulating film 13.
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Inventors:
KUN SHATOKU
Application Number:
JP2005164773A
Publication Date:
July 13, 2006
Filing Date:
June 03, 2005
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC
International Classes:
H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Hiroyuki Nakagawa