Title:
METHOD OF MANUFACTURING MESA-TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3767864
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a mesa-type semiconductor device which forms the electrode of a uniform thickness on only a part where an insulating film is not formed of the surface of the semiconductor layer of a semiconductor wafer on which a recess is formed in order to manufacture the mesa-type semiconductor device.
SOLUTION: The device element is formed by forming at least a pn junction in the semiconductor wafer 1. The recess 8 is formed around the device element by etching. An insulating film 5 is formed on the surface of the recess 8. A metal film 6a is formed on the surface of the semiconductor layer 4 and the insulating film 5 of a semiconductor wafer 1 by sputtering or vacuum evaporation. The adhesion between the semiconductor layer 4 and the metal film 6a is enhanced by carrying out a heat treatment, while the metal film on the insulating film 5 is selectively removed by jetting high-pressure water onto the surface of the semiconductor wafer 1. The chip of a mesa-type semiconductor device is formed by cutting the parts of the semiconductor wafer 1 underneath the recess 8.
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Inventors:
Ryuichi Negi
Application Number:
JP2004038177A
Publication Date:
April 19, 2006
Filing Date:
February 16, 2004
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L21/329; H01L29/06; H01L21/28; H01L21/288; H01L21/30; H01L21/31; H01L21/3205; H01L21/78; (IPC1-7): H01L21/329; H01L29/06
Domestic Patent References:
| JP2003338590A |
Attorney, Agent or Firm:
Kawamura Taku
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