To provide a method for manufacturing a photomask to improve the accuracy of estimating the degree of influences when a defect on a photomask is transferred onto a substrate.
The method includes steps of: detecting a defect in a pattern formed on a photomask (S1); obtaining a pattern image in a first region including the defect (S3); obtaining a pattern contour extraction data from the pattern image (S4); generating a first figure data based on the pattern contour extraction data and the pixel size on the photomask (S5); obtaining a pattern data corresponding to a second region including the first region from the design data of the photomask (S8); generating a second figure data from the pattern data (S9); generating a third figure data by replacing the second figure data with the first figure data only in a region where the first figure data and the second figure data overlap (S12); generating respective transfer patterns of the pattern figures represented by the second figure data and the third figure data (13); and comparing the transfer patterns to determine whether defect correction is necessary or not (S17).
YAMANAKA EIJI
JP2002323749A | 2002-11-08 | |||
JP2004037579A | 2004-02-05 | |||
JPH10301258A | 1998-11-13 | |||
JP2000147748A | 2000-05-26 | |||
JP2002229179A | 2002-08-14 | |||
JP2002543470A | 2002-12-17 | |||
JPH0887103A | 1996-04-02 |
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto