Title:
METHOD FOR REMOVING RESIST MASK
Document Type and Number:
Japanese Patent JP3391410
Kind Code:
B2
Abstract:
PURPOSE: To prevent production of oxides of conductivity type impurities and explosion of resist while leaving no residue by implanting conductivity type impurity ions selectively into a wafer, conducting a plasma processing with a gas containing hydrogen and a down flow processing with a gas containing oxygen, and then exposing the wafer to nitric acid or phosphoric acid.
CONSTITUTION: Conductivity type impurity ions are implanted selectively into a wafer 15 based on a resist mask 32 to form an alumina film 33, a modified layer 32b, and an unmodified layer 32a. The wafer 15 is then subjected to plasma processing with a mixture gas of hydrogen and steam thus removing the modified layer 32b followed by down flow processing with a mixture gas of oxygen and steam thus removing the unmodified layer 32a. Subsequently, the wafer 15 is immersed into nitric acid solution or phosphoric acid solution thus removing alumina based residue 33a. This method allows perfect removal of the resist mask 32 and the alumina based residue 33a and prevents production of oxides of conductivity type impurities or explosion of resist.
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Inventors:
Keisuke Shinagawa
Application Number:
JP23201893A
Publication Date:
March 31, 2003
Filing Date:
September 17, 1993
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/027; H01L21/302; H01L21/3065; H01L21/311; (IPC1-7): H01L21/027; H01L21/3065
Domestic Patent References:
| JP1101633A | ||||
| JP4304632A |
Attorney, Agent or Firm:
Keizo Okamoto
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