MgO VAPOR DEPOSITION MATERIAL AND PRODUCTION METHOD THEREFOR

Title:

MgO VAPOR DEPOSITION MATERIAL AND PRODUCTION METHOD THEREFOR

Document Type and Number:

Japanese Patent JP2003226959

Kind Code:

A

Abstract:

To provide an electron beam vapor deposition method in which splashes are hard to occur even on vapor deposition, and the film properties of an MgO film to be deposited is improved.

The vapor deposition material consists of polycrystals having an MgO purity of ≥99.9% and a relative density of ≥90.0%, and having a nitrogen N content of 0.01 to 200 ppm.

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Inventors:

SAKURAI HIDEAKI
TOYOGUCHI GINJIRO
KUROMITSU YOSHIO

Application Number:

JP2002335651A

Publication Date:

August 15, 2003

Filing Date:

November 19, 2002

Export Citation:

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Assignee:

MITSUBISHI MATERIALS CORP

International Classes:

C04B35/053; C23C14/24; H01J9/02; H01J11/22; H01J11/34; H01J11/40; (IPC1-7): C23C14/24; C04B35/053; H01J11/02

Attorney, Agent or Firm:

Masatake Shiga (6 people outside)

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