PURPOSE: To obtain a photoconductive material high in sensitivity and superior in durability, etc., by forming the first amorphous Si layer contg. O and an element of group III of the periodic table each in a specified distribution, and the second amorphous Si layer contg. C and H less than specified proportions in due order on a substrate.
CONSTITUTION: A photoconductive material 100 superior in photoconductivity, durability, etc. by forming on a conductive layer formed on an insulating support surface or a conductive substrate 101, the first amorphous Si layer 102 contg. O in concn. of C(O)1 distributed high on the side of the substrate 101, and an element of group III of the periodic table, such as B or Ga in a concn. of remaining constant till the layer thickness t2 and gradually decreasing to o at the interface tS with the next layer 106, C(III)1 distributed high on the side of the substrate 101, remaining constant till the layer thickness t1, and gradually decreasing to O at the interface tS, and a second amorphous Si layer 106 contg. ≤30 atomic % C and H. C(III)1 may be decreased to O at the end of a layer region 104 in the layer 102, and C(O)1 may be decreased to O at the interface tS.
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OGAWA KIYOUSUKE
KANBE JIYUNICHIROU
SAITOU KEISHI
OOSATO YOUICHI
SHIRAI SHIGERU
