PLASMA CLEANING METHOD FOR SUBSTRATE

Japanese Patent JP3368809

B2

PROBLEM TO BE SOLVED: To efficiently and uniformly perform plasma cleaning, by measuring the length of a substrate before the substrate is transported into a vacuum chamber, controlling a transportation means based on the length, and always placing the substrate in the center of the vacuum chamber.
SOLUTION: A substrate detection sensor 65 is arranged in a transportation path 14 on the upstream side of a vacuum chamber 11. The length Lp of a substrate 1 is obtained from the time when the substrate 1 under transportation is detected and from transportation speed. When the substrate 1 is transported into the vacuum chamber 11 in a length wipe direction Lv and it is placed on an electrode 12, a distance xb from the tip part of the substrate 1 to an end part on the downstream side in the vacuum chamber 11 is designated, and the substrate 1 is pushed to the center in the vacuum chamber 11. A cover member 13 descends and the vacuum chamber 11 is closed. Then, plasma leaning of the surface of the substrate 1 is performed. At that time, the substrate 1 is always placed is the center of the vacuum chamber 11, and the generated plasma is stabilized. Then, uniform and efficient plasma cleaning can always be executed on the substrate 1.

JPS61184823	MAKING OF INTEGRATED CIRCUIT
JP2812288	[Title of the Invention] A method for manufacturing a semiconductor device
JPH03150377	PLASMA TREATING DEVICE

Masao Hidaka

JP22782397A

January 20, 2003

August 25, 1997

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Matsushita Electric Industrial Co., Ltd

H01L21/302; B65G25/08; H01L21/02; H01L21/304; H01L21/3065; H01L21/677; H01L21/68; (IPC1-7): H01L21/68; B65G25/08; H01L21/02; H01L21/304; H01L21/3065

JP7147315A
JP4311044A
JP963917A
JP6115678A

Fumio Iwahashi (2 others)

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